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| 型号： | ZXMP6A17GTA |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 3A SOT223 |
| 其它图纸： | SOT-223 SOT-223 Footprint |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 637pF @ 30V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMP6A17GDKR |
ZXMP6A17G
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 6)
Symbol
V DSS
V GS
Value
-60
± 20
-4.3
Unit
V
V
Continuous Drain Current
V GS = 10V
T A = +70°C (Note 6)
I D
-3.5
A
(Note 5)
-3.0
Pulsed Drain Current
V GS = 10V
(Note 7)
I DM
-13.7
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 6)
(Note 7)
I S
I SM
-4.8
-13.7
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 8)
P D
R θ JA
R θ JL
T J , T STG
2.0
16
3.9
31
62.5
32.0
9.8
-55 to +150
W
mW/°C
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t ≤ 10sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP6A17G
Document Number DS33375 Rev. 6 - 2
2 of 8
www.diodes.com
February 2014
? Diodes Incorporated
相关PDF资料 |
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|---|---|
| ZXMP6A17KTC | MOSFET P-CH 60V 4.4A DPAK |
| ZXMP6A17N8TC | MOSFET P-CH 60V 2.7A SO8 |
| ZXMP6A18DN8TA | MOSFET 2P-CH 60V 4.6A 8-SOIC |
| ZXMP6A18KTC | MOSFET P-CHAN 60V DPAK |
| ZXMP7A17GTA | MOSFET P-CH 70V 3.7A SOT-223 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMP6A17GTA-CUT TAPE | 制造商:DIODES 功能描述:ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223 |
| ZXMP6A17GTC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP6A17K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP6A17KTC | 功能描述:MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMP6A17N8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET |
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