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参数资料
| 型号： | 0790_XP162A01B5PR |
| 厂商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS场效应管 |
| 文件页数： | 1/4页 |
| 文件大小： | 163K |
| 代理商： | 0790_XP162A01B5PR |
870
11
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.25
(Vgs=-4.5V)
: Rds(on)=0.4
(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting : SOT-89
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.25 (max)
NUltra High-Speed Switching
NSOT-89 Package
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-20
±12
-2
-6
-2
2
150
-55~150
V
A
W
:
SYMBOL
RATINGS
UNITS
Ta=25
:
When implemented on a ceramic PCB
Note:
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