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参数资料
| 型号： | 0790_XP162A01B5PR |
| 厂商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS场效应管 |
| 文件页数： | 4/4页 |
| 文件大小： | 163K |
| 代理商： | 0790_XP162A01B5PR |
873
11
Capacitance:C
(pF)
Drain-Source Voltage:Vds (V)
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
Vgs=0V, f=1MHz
Switching
Time:t
(ns)
Drain Current:Id (A)
SWITCHING TIME vs. DRAIN CURRENT
Vgs=-5V, Vdd
-10V, PW=10
sec. duty≤1%
Gate-Source
Voltage:Vgs
(V)
Gate Charge:Qg (nc)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=-10V, Id=-2A
Reverse
Drain
Current:Id
(A)
Source-Drain Voltage:Vsd (V)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test
Pulse Width:PW (sec)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5C/W, (Implemented on a ceramic PCB)
Single Pulse
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