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参数资料
| 型号： | 0790_XP162A01B5PR |
| 厂商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS场效应管 |
| 文件页数： | 2/4页 |
| 文件大小： | 163K |
| 代理商： | 0790_XP162A01B5PR |
871
11
DC Characteristics
Ta=25
:
PARAMETER
UNITS
Gate-Source Cut-off Voltage
Vgs(off)
-0.5
V
0.4
0.3
Id=-1A, Vgs=-2.5V
Gate-Source Leakage Current
Igss
A
±10
Forward Transfer Admittance
(note)
2.5
S
Body Drain Diode
Forward Voltage
-0.85
-1.1
V
Drain Cut-off Current
Idss
-10
A
Vf
Vds=-20V, Vgs=0V
Id=-1mA, Vds=-10V
Id=-1A, Vds=-10V
If=-2A, Vgs=0V
Vgs=
±12V, Vds=0V
Drain-Source On-state
Resistance (note)
Rds(on)
Id=-1A, Vgs=-4.5V
0.19
0.25
SYMBOL
CONDITIONS
MAX
MIN
TYP
PARAMETER
UNITS
Feedback Capacitance
Crss
pF
Output Capacitance
Coss
pF
Input Capacitance
Ciss
65
180
320
pF
Vds=-10V, Vgs=0V
f=1MHz
SYMBOL
CONDITIONS
MAX
MIN
TYP
Dynamic Characteristics
Ta=25
:
Effective during pulse test.
Note:
Yfs
PARAMETER
UNITS
Fall Time
tf
ns
Rise Time
tr
ns
Turn-on Delay Time
td (on)
50
Turn-off Delay Time
td (off)
ns
40
15
10ns
Vgs=-5V, Id=-1A
Vdd=-10V
SYMBOL
CONDITIONS
MAX
MIN
TYP
Switching Characteristics
Ta=25
:
PARAMETER
UNITS
Rth (ch-a)
Thermal Resistance
(channel-ambience)
62.5
:/W
Implement on a ceramic PCB
SYMBOL
CONDITIONS
MAX
MIN
TYP
Thermal Characteristics
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