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参数资料
| 型号： | 08090 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射频功率场效应晶体管90瓦，869-960兆赫 |
| 文件页数： | 10/10页 |
| 文件大小： | 205K |
| 代理商： | 08090 |
Data Sheet
9
2004-04-05
PTF080901
Package Outline Specifications
Package 31248
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
0.0381 [.0015]
2X 12.70
[.500]
19.43±0.51
[.765±.020]
19.81±0.20
[.780±.008]
SPH 1.58
[.062]
9.78
[.385]
S
G
D
( 45° X 2.72
[.107])
20.57
[.810]
-A-
3.61±0.38
[.142±.015]
1.02
[.040]
0.51
[.020]
4.83±0.51
[.190±.020]
PKG _248_1
CL
[.370
]
+.004
-.006
LID 9.40+0.10
-0.15
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