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参数资料
| 型号： | 08090 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射频功率场效应晶体管90瓦，869-960兆赫 |
| 文件页数： | 5/10页 |
| 文件大小： | 205K |
| 代理商： | 08090 |
Data Sheet
4
2004-04-05
PTF080901
50.0
50.5
51.0
51.5
52.0
24
26
28
30
32
Supply Voltage (V)
Output
Power
(dBm)
Output Power (at 1 dB Compression)
vs. Supply Voltage
IDQ = 650 mA, f = 960 MHz
IS-95 CDMA Performance
VDD = 28 V, IDQ = 700 mA, f = 880 MHz
0
10
20
30
40
50
60
40
41
42
43
44
45
Output Power (dBm), Avg.
Drain
Efficiency
(%)
-70
-65
-60
-55
-50
-45
-40
Adjacent
Channel
Power
Ratio
(dBc)
Efficiency
ACP F
C – 0.75 MHz
ACPR F
C + 1.98 MHz
Power Sweep
VDD = 28 V, f = 960 MHz
16.5
17.0
17.5
18.0
18.5
19.0
37
39
41
43
45
47
49
51
53
Output Power (dBm)
Power
Gain
(dB)
I
DQ = 820 mA
I
DQ = 480 mA
I
DQ = 650 mA
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 650 mA, f = 960 MHz
14
15
16
17
18
19
20
40
43
46
49
52
Output Power (dBm)
Gain
(dB)
10
20
30
40
50
60
70
Drain
Efficiency
(%)
Efficiency
Gain
Typical Performance (cont.)
All published data at TCASE = 25°C unless otherwise indicated.
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