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参数资料
| 型号： | 11AA161T-I/TT |
| 厂商： | Microchip Technology |
| 文件页数： | 13/44页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16K SER IND SOT23-3 |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100kHz |
| 接口： | UNI/O?（单线） |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
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11AAXXX/11LCXXX
4.4
Write Enable ( WREN ) and Write
Disable ( WRDI ) Instructions
The following is a list of conditions under which the
write enable latch will be reset:
The 11XX contains a write enable latch. See Table 6-1
for the Write-Protect Functionality Matrix. This latch
must be set before any write operation will be com-
pleted internally. The WREN instruction will set the
latch, and the WRDI instruction will reset the latch.
Note: The WREN and WRDI instructions must
be terminated with a NoMAK following
the command byte. If a NoMAK is not
received at this point, the command will
be considered invalid, and the device
will go into Idle mode without responding
with a SAK or executing the command.
?
?
?
?
?
?
Power-up
WRDI instruction successfully executed
WRSR instruction successfully executed
WRITE instruction successfully executed
ERAL instruction successfully executed
SETAL instruction successfully executed
FIGURE 4-4:
WRITE ENABLE COMMAND SEQUENCE
SCIO
Standby Pulse
Start Header
0 1 0 1 0 1 0 1
Device Address
1 0 1 0 0 0 0 0 (1)
Command
SCIO
1 0 0 1 0 1 1 0
Note 1: For the 11XXXX1, this bit must be a ‘ 1 ’.
FIGURE 4-5:
WRITE DISABLE COMMAND SEQUENCE
SCIO
Standby Pulse
Start Header
0 1 0 1 0 1 0 1
Device Address
1 0 1 0 0 0 0 0 (1)
Command
SCIO
1 0 0 1 0 0 0 1
Note 1: For the 11XXXX1, this bit must be a ‘ 1 ’.
? 2010 Microchip Technology Inc.
Preliminary
DS22067H-page 13
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