参数资料
型号: 15ETH06PBF
厂商: Vishay Semiconductors
文件页数: 1/3页
文件大小: 0K
描述: DIODE ULT FAST 600V 15A TO220AC
产品目录绘图: TO-220AC Front
其它图纸: TO-220AC Circuit
标准包装: 1,000
系列: FRED Pt™
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 15A
电压 - 在 If 时为正向 (Vf)(最大): 2.2V @ 15A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 50µA @ 600V
安装类型: 通孔
封装/外壳: TO-220-2 熔断式,TO-220AC
供应商设备封装: TO-220AC
包装: 管件
产品目录页面: 1534 (CN2011-ZH PDF)
其它名称: *15ETH06PBF
VS-15ETH06PBF
VS-15ETH06PBF-ND
VS15ETH06PBF
VS15ETH06PBF-ND
\? vS15ErH06PbI=,vs-15En-I0I‘>N3,vs15ErH06FPPbl=,vs-15ErH06FP-N37 www'ViShay'C°m Vishay SemiconductorsHyperfast Rectifier, 15 A Fred Pt?
FEATURES
0 Hyperfast recoverytime ?
/ \ ' Low fonivard voltage drop PM"
V O 175 °C operating junction temperature @
TO—220AC To-220 FuLL—PAK ' LOW leakage Current
0 Single die center tap module gang
Dime . Fully isolated package 0/‘NS : 2500 VRMS) HALOGEN2 . FREE. UL E78996 pending W Available
' Designed and qualified according to JEDEC—JESD47
0 Material categorization: For definitions of compliance
‘ 3 ‘ 3 please see www.visha .com/doc?99912Cathode Anode Cathode AnodeDESCRIPTION/APPLICATIONSvs—15ETHo6PbF VS-15ETHo6FPPbFvs-15ETHo6-N3 vS—15ETHo6FP—N3 State of the art hyperfast recovery rectifiers designed with
optimized performance of fonNard voltage drop, hyperfast
recovery time, and soft recovery.PRoDUcT SUMMARY The planar structure and the platinum doped life time controlguarantee the best overall performance, ruggedness andreliability characteristics.These devices are intended for use in PFC boost stage in theAC/DC section of SMPS, inverters or as freewheelingdiodes.Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce overdissipation in the switching element and snubbers.
Sing'e die
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS
Peak repetitive reverse voltage
TC : 140 °C
Average rectified forward current
TC : 80 °C (FULL-PAK)
Non-repetitive peak surge current
T J : 25 °C (l=ULL—PAK)
Peak repetitive forward current
Operating junction and storage temperatures
ELEcTRIcAL sPEc 5 0c unless otherwise specified)
PARAMETER TEST CONDITIONS
Breakdown voltage, blocking voltage IR : 100 uA
Forward voltage
IF : 15 A,TJ : 150 “C
VH : VR rated
Reverse leakage current
TJ : 150 “C, VR : VR rated
Junction capacitance VR : 600 V
Series inductance Measured lead to lead 5 mm from package body
Revision: 05-Apr-12 1 Document Number: 94002
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.c9m/doc?91000
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