参数资料
型号: 1N2059
厂商: Vishay Semiconductors
文件页数: 3/3页
文件大小: 0K
描述: DIODE STD REC 300V 250A DO-9
标准包装: 10
二极管类型: 标准
电压 - (Vr)(最大): 300V
电流 - 平均整流 (Io): 250A
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 250A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 17mA @ 300V
安装类型: 底座,接线柱安装
封装/外壳: DO-205AB,DO-9,接线柱
供应商设备封装: DO-205AB,DO-9
包装: 散装
1N2054, 1N3735 Series
FULL cYcLE (AMPERES)
- coNuucT.oNPEa|60 B0 100 120 HO
AVERAGE FORWARD CURRENT OVER
160
MAx|MUM ALLOWAELE CASE TEMPERATURE 1°C]
180
Fig‘ 1 - Average Forward current Vs. Maximum Allowable
Case Temperature (sinusoidal current waveform)
4500
§
0AT ANT HATED LOADCONDLTIONAND wlTHRATED VRRM APPLIEDFoRwARD CURRENT 1AMPEnEsr
FOLLOWING SURGE
PEAK r1ALF s|NE WAVE
——IIIIii‘r§?I
——IlI||l1 2 4 s 810 20INTERNAHONAL RECTIFIER
NUMEEE or EQUAL AMPL|TUDE HALF CYCLE
CURRENT PULSES (N)
Fig. 3 — Maximum Non-Renetitive surge currem
Vs. Numbnr of current Pulses
INSTANTANEOUS FORWARD CURRENT
(AMFEHES)
0 1 2
WE“
AVERAGE FORWARD CURRENT OVER
FULL cvcLE (AMPERESIMAXTMUM ALLDWABLE CASE TEMPERATURE (00
rso
I80 zuu
Fig. 2 — Average Forward Currant Vs. Maximum Allowable
Case Temperalure (Rectangular Current Waveform)
Trrmrianr Thermal lmmdqnnz. juncnun lo case — Klw
4 10-1 A ‘O ‘ A 1 4
Sdhare Waw pulse Duranurr - 5Fla. 4 — Maximum Transient Thermal Impedance,
Junction-to-case Vs. Pulse Duration
3 4 5 5
INSTANTAN Eous FORWAR D VOLTAGE
NOLTS)
Fig. 5 — Nhximum Forward Vnlrage Vs. Forward current
B-76
相关PDF资料
PDF描述
1N3064TR DIODE SGL JUNCT 75V 4.0NS DO-35
1N3070TR DIODE SGL JUNCT 200V SW DO-35
1N3087R DIODE STD REC 300V 150A DO-30
1N3276R RECTIFIER STUD 1600V 160A DO-9
1N3290R DIODE STD REC 300V 100A DO-8
相关代理商/技术参数
参数描述
1N2059R 制造商:Microsemi Corporation 功能描述:300V 275A 2PIN DO-9 - Bulk
1N205G 制造商:CHENYI 制造商全称:Shanghai Lunsure Electronic Tech 功能描述:GENERAL PURPOSE PLASTIC RECTIFIER
1N206 制造商:未知厂家 制造商全称:未知厂家 功能描述:silicon diode
1N2060 制造商:Microsemi Corporation 功能描述:350V 275A 2PIN DO-9 - Bulk
1N2060R 制造商:Microsemi Corporation 功能描述:350V 275A 2PIN DO-9 - Bulk