参数资料
型号: 1N3290R
厂商: Vishay Semiconductors
文件页数: 2/3页
文件大小: 0K
描述: DIODE STD REC 300V 100A DO-8
标准包装: 25
二极管类型: 标准
电压 - (Vr)(最大): 300V
电流 - 平均整流 (Io): 100A
电压 - 在 If 时为正向 (Vf)(最大): 1.5V @ 100A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 24mA @ 300V
安装类型: 底座,接线柱安装
封装/外壳: DO-205AA,DO-8,接线柱
供应商设备封装: DO-205AA(DO-8)
包装: 散装
其它名称: *1N3290R
VS-1N3290R
VS-1N3290R-ND
VS1N3290R
VS1N3290R-ND
1 N3288, 1N3288A series iNTei=iNA11o~AL Re:-neien E
VOLTAGE RATINGS
IRRM — Max. PeakReverse CurrentVRRM V Max. VRSM — Max. VR ~ Max. Max. Flared IHAV)Repetitive Peak Non-repetitive Peak Direct Reverse and VHRMReverse Voltage Reverse Voltage Voltage 1 Pliase Operationiv) lvl (V) (mA)
rc = -400‘: to mac 0 Tc = zsoc to zuooc Tc = —ao°c to 200°C (D M
1N328B 1N328BAIN3z85 1N32a9A1N329o iN329oA1N3291 iN32giA1N3z92 1N3292a1N329:l 1N3293A1N3294 1N3294A1N3295 1N3295Ai~32s6 iN3296A(D Basic number indicates cathode-to-mse. For anode-to-case, add "R" to part number. a.g.. 1N3291RA
ELECTRICAL SPECIFICATIONS
180° sinusoidal conduction. Max, TC : 1300C‘
Following any rated load
Half cycle 50 Hz sine waveFollowing any rated loadcondition and with rated VRRM
or 6 ms rectangular pulse
Hall cycle 60 Hz sine wave app.ied_
or 5 ms rectangular pulse
Half cycle 50 HZ sine wave
or 6 ms rectangular pulse
Half cycle so Hz sine wave
or 5 ms rectangular pulse following surge. initial TJ = 200°C devlce IusmgIzx? Max. I2‘/T for
I F (AV}Max. average lorward current
IFSM Max. peak one-cycle
no"?reuetitive surge
current
condition and with VRRM applied
lollowing surge = D.
I2t Max. l2t for fusing with rated VRRM applied
Max‘ |2t for individual
individual device @
fusing
VFM Max. peak forward
Voltage
TC Max. operating casetemperature range
T5‘g Max stairage
temperature range
with VHRM = 0 following surge,
initial TJ : 200°C
? 1N3292B: —650 to 200°Cmcase
“ 1N3292B: —65D to 2000C
R‘hJc Max. internal thermal Dc operation.
resistance, |unetion-
Rmcs Thermal resistance, Mounting surface flat, smooth, and greased.
rase<to—sink
T Mounting torque II.3~14.1 N m llbl nl Non-lubricated threads
H0041 25)
Case stvle DO>205AA (008)
HR B-15)‘JEDEC registerea ialues
(1) Min. To = As5oclor1N3292B only. G) I2t Iar time (X = I2‘/I - ‘/tx.
? Applies to 1N3292B.
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相关代理商/技术参数
参数描述
1N3290R/(MATRIX) 制造商:Vishay Intertechnologies 功能描述:300V 100A
1N3290S 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SILICON POWER RECTIFIER
1N3291 制造商:Microsemi Corporation 功能描述:400V 100A 2PIN DO-8 - Bulk 制造商:Int'L Rectifier 功能描述:Diode 400V 100A 2-Pin DO-8
1N3291A 功能描述:整流器 SI STND RECOV DO-8 200-1400V 100A 400PV RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
1N3291AR 功能描述:整流器 SI STND RECOV DO-8 200-1400V 100A 400PV RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel