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参数资料
| 型号： | 1N4003GP/91 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 329K |
| 代理商： | 1N4003GP/91 |
1N4001GP thru 1N4007GP
Document Number 88504
14-Sep-05
Vishay General Semiconductor
www.vishay.com
1
Pat
ente
d*
DO-204AL (DO-41)
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
IR
5.0 A
VF
1.1 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current, typical IR less than 0.1 A
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for both consumer and automotive applications
Mechanical Data
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
400
600
800
1000
V
* Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
* Maximum DC blocking
voltage
VDC
50
100
200
400
600
800
1000
V
* Maximum average forward
rectified current 0.375"
(9.5 mm) lead length
at TA = 75 °C
IF(AV)
1.0
A
* Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
* Maximum full load reverse
current, full cycle average
0.375" (9.5 mm) lead length
TA = 75 °C
IR(AV)
30
A
* Operating junction and
storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N4003GP/66 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4001 | SIGNAL DIODE, DO-41 |
| 1N4002GP.TR | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4007GPT26A | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4003CSM4-JQR-BG4 | 1 A, 200 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4003GPE/3 | 功能描述:整流器 Vr/200V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4003GPE/4 | 功能描述:整流器 Vr/200V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4003GPE/54 | 功能描述:整流器 Vr/200V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4003GP-E3/1 | 功能描述:整流器 200 Volt 1.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4003GP-E3/23 | 功能描述:整流器 Vr/200V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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