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| 型号： | 1N4007T-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/2页 |
| 文件大小： | 56K |
| 描述： | DIODE 1000V 1A DO-41 |
| 标准包装： | 5,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 1000V（1kV） |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.1V @ 1A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 1000V |
| 电容@ Vr, F： | 15pF @ 4V，1MHz |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-204AL，DO-41，轴向 |
| 供应商设备封装： | DO-41 |
| 包装： | 带卷 (TR) |
| 其它名称： | 1N4007T-G-ND 641-1457-2 |
     Parameter Symbo 1N l Unit Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current O C 0.375"(9.5mm) Lead Length @TA=55 Peak Forward Surge Current, 8.3mS single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @1.0A Maximum DC Reverse Current at Rated TA=25 O C Operating Temperature Range Storage Ttemperature Range DC Blocking voltage per element Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) 50 35 50 VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJA TJ TSTG 1.0 30 5.0 50 15 60 -55 ~ +150 -55 ~ +150 V V V A A V PF O C O C μA O C/W NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. Thermal Resistance from junction to terminal 6.0mm copper pads to each terminal. 2 2. V oltage: 50 to 1000 V Current: 1.0 A RoHS Device Dimensions in inches and (millimeter) DO-41 Features -Low cost construction. -Fast forward voltage drop. -Low reverse leakage. -High forward surge current capability . -High soldering temperature guarantee: 260 OC/10 seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg) tension. Mechanical data -Case: transfer molded plastic, DO-41 -Epoxy: UL 94V -0 rate flame retardant -Polarity: Indicated by cathode band -Lead: Plated axial lead, solderable per MIL-STD- 202E, method 208C -Mounting position: Any -W eight: 0.012ounce, 0.33 grams 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 1N4001-G Thru. 1N4007-G Page 1 QW-BG013 General Purpose Silicon Rectifiers REV:A Comchip Technology CO., LTD. 0.205(5.20) 1.0(25.40) Min. 0.107(2.70) 0.034(0.90) 0.028(0.70) 0.080(2.00) 0.160(4.20) 1.0(25.40) Min. 1.1 30 -G 4001 1N -G 4002 1N -G 4003 1N -G 4004 1N -G 4005 1N -G 4006 1N -G 4007 =100 O C TA Maximum Full Load Reverse Current,full cycle average 0.375”(9.5mm)lead length at TL=75 O C IR(AV) μA Electrical Characteristics (at TA=25°C unless otherwise noted) Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. |
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相关代理商/技术参数 |
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| 1N4007TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 1KV 1A 2-Pin DO-41 T/R |
| 1N4007-TP | 功能描述:整流器 Vr/1000V Io/1A RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4007TR | 制造商:Surge Components Inc 功能描述: |
| 1N4007-TR | 制造商:Micro Commercial Components (MCC) 功能描述:1A STANDARD RECOVERY 制造商:Taitron Components Inc 功能描述:Diode 1KV 1A 2-Pin DO-41 T/R 制造商:LITEON-SEMI 功能描述:REVERSE VOLTAGE - 50 to 1000 Volts, FORWARD CURRENT - 1.0 Ampere |
| 1N4009 | 制造商:. 功能描述: |
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