参数资料
型号: 1N4148-G
厂商: Comchip Technology
文件页数: 1/3页
文件大小: 83K
描述: DIODE FAST SW 150MA 75V DO-35
产品培训模块: Flat Chip Diodes
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 75V
电流 - 平均整流 (Io): 150mA
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 10mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 5µA @ 75V
安装类型: 通孔
封装/外壳: DO-204AH,DO-35,轴向
供应商设备封装: DO-35
包装: 标准包装
产品目录页面: 1571 (CN2011-ZH PDF)
其它名称: 641-1313-6
QW-B0050
Page 1
REV:A
V
oltage: 100V
Current: 0.15A
RoHS Device
1N4148-G
Dimensions
in
inches
and
(millimeter)
DO-35
1.02(26.00) Min.
0.079(2.00) Max.
1.02(26.00) Min.
Features
-Surge overload ratings to 2 amperes peak.
-Ideal for printed circuit board.
Mechanical data
-Case: Glass, DO-35
-Lead:
Axial leads,solderable per MIL-STD-202,
? 0.02(0.52)Typ.
0.165(4.20) Max.
Symbol
Parameter
Value
Unit
Maximum Ratings and Electrical Characteristics
Maximum RMS Voltage
150
Maximum Average Forward Current
VRRM
100
350
V
mA
mA
K/W
IFSM
IF(AV)
RΘJA
A
IFSN
Maximum Repetitive Peak Voltage
VRMS
75
V
500
Forward Repetitive Peak Current
Peak Forward Surge Current tp=1uS
2.0
Method 208 guaranteed.
-W
eight: 0.13gram
-Polarity:Indicated by cathode band.
-Mounting Position:
Any
Operating and Storage Temperature Rang
-65 to +200
°C
TJ,TSTG
Switching Diode
Comchip Technology CO., LTD.
Typical Resistance Junction to Amvient Air
(Note 1)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
NTOES:
(1) Thermal Resistance Junction to Ambient Air.
V
1
IR
VF
Forward Voltage at IF = 10 mA
Parameter
Symbol
Min
Max
Unit
Trr
4.
ns
Typ.
Leakage Current
at VR= 20 V
at VR= 75 V
at VR= 20 V,TJ = 150°C
IR
IR
50
5
25
uA
uA
nA
Reverse Recovery Time( Note 2)
(2) Rever
se Recovery Test Conditions: IF=10mA,VR=6V,Irr=0.1 X IR,RL=100?.
T-erminal:Pure tin plated lead free.
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