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参数资料
| 型号： | 1N5819RL |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 3/5页 |
| 文件大小： | 56K |
| 代理商： | 1N5819RL |
1N581x
3/5
1E-3
1E-2
1E-1
1E+0
0
1
2
3
4
5
6
7
8
9
10
IM(A)
t(s)
Ta=100°C
Ta=75°C
Ta=25°C
IM
t
δ=0.5
Fig. 5-1:
Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5817/1N5818).
1E-1
1E+0
1E+1
1E+2
1E+3
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-a)/Rth(j-a)
T
δ=tp/T
tp
tp(s)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
1E-3
1E-2
1E-1
1E+0
0
1
2
3
4
5
6
7
8
IM(A)
t(s)
Ta=100°C
Ta=75°C
Ta=25°C
IM
t
δ=0.5
Fig. 5-2:
Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5819).
1
2
5
102040
10
20
50
100
200
500
C(pF)
VR(V)
1N5819
1N5817
1N5818
F=1MHz
Tj=25°C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5819RLG | 功能描述:肖特基二极管与整流器 1A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5819RLG-CUT TAPE | 制造商:ON 功能描述:1N5819 Series 40 V 1 A Schottky Rectifier Diode - DO-201AD |
| 1N5819S | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
| 1N5819SF | 制造商:GXELECTRONICS 制造商全称:Gaomi Xinghe Electronics Co., Ltd. 功能描述:SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere |
| 1N5819SX | 制造商:Microwave Semiconductor 功能描述: |
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