参数资料
型号: 1N5820RL
厂商: MOTOROLA INC
元件分类: 整流器
英文描述: 3 A, 20 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, CASE 267-03, 2 PIN
文件页数: 1/6页
文件大小: 168K
代理商: 1N5820RL
1
Rectifier Device Data
Designer's Data Sheet
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
Extremely Low vF
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16
″ from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating
Symbol
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
V
Non–Repetitive Peak Reverse Voltage
VRSM
24
36
48
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified Forward Current (2)
VR(equiv) v 0.2 VR(dc), TL = 95°C
(R
θJA = 28°C/W, P.C. Board Mounting, see Note 2)
IO
3.0
A
Ambient Temperature
Rated VR(dc), PF(AV) = 0
R
θJA = 28°C/W
TA
90
85
80
°C
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
IFSM
80 (for one cycle)
A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
TJ, Tstg
*65 to +125
°C
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150
°C
*THERMAL CHARACTERISTICS (Note 2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
28
°C/W
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32
″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by 1N5820/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
1N5820
1N5821
1N5822
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267–03
PLASTIC
1N5820 and 1N5822 are
Motorola Preferred Devices
Rev 2
相关PDF资料
PDF描述
1N5821RL 3 A, 30 V, SILICON, RECTIFIER DIODE
1N5821 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5913BRL 3.3 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
1N5914BRL 3.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
1N5919BRL 5.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
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