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参数资料
| 型号： | 1N5820RL |
| 厂商： | MOTOROLA INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, CASE 267-03, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 168K |
| 代理商： | 1N5820RL |
1N5820 1N5821 1N5822
4
Rectifier Device Data
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
LEAD LENGTH = 1/4
″
Ppk
tp
t1
TIME
DUTY CYCLE = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
TJL = Ppk RθJL [D + (1 – D) r(t1 + tp) + r(tp) – r(t1)] where:
TJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time
t1 + tp, etc.
Figure 5. Thermal Response
20 k
The temperature of the lead should be measured using a ther-
mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steady–state conditions are achieved. Using the measured val-
ue of TL, the junction temperature may be determined by:
TJ = TL + DTJL
3.0
0.1
IF(AV), AVERAGE FORWARD CURRENT (AMP)
10
7.0
5.0
0.7
0.5
0.1
5.0
P
0.2
0.3
0.5
2.0
,A
VERAGE
POWER
DISSIP
A
TION
(W
A
TTS)
F(A
V)
3.0
2.0
1.0
0.3
0.2
0.7 1.0
7.0
10
Figure 6. Forward Power Dissipation 1N5820–22
dc
SQUARE WAVE
TJ ≈ 125°C
SINE WAVE
I
(FM)
I
(AV)
+ p (Resistive Load)
Capacitive
Loads
5.0
10
20
TA(A)
TA(K)
TL(A)
TC(A)
TJ
TC(K)
TL(K)
PD
R
θS(A)
R
θL(A)
R
θJ(A)
R
θJ(K)
R
θL(K)
R
θS(K)
NOTE 3 — APPROXIMATE THERMAL CIRCUIT MODEL
Use of the above model permits junction to lead thermal resis-
tance for any mounting configuration to be found. For a given total
lead length, lowest values occur when one side of the rectifier is
brought as close as possible to the heat sink. Terms in the model
signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
R
θS = Thermal Resistance, Heat Sink to Ambient
R
θL = Thermal Resistance, Lead to Heat Sink
R
θJ = Thermal Resistance, Junction to Case
PD = Total Power Dissipation = PF + PR
PF = Forward Power Dissipation
PR = Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides, respec-
tively.) Values for thermal resistance components are:
R
θL = 42°C/W/in typically and 48°C/W/in maximum
R
θJ = 10°C/W typically and 16°C/W maximum
The maximum lead temperature may be found as follows:
TL = TJ(max) * n TJL
where n TJL [ R
θJL PD
TYPICAL VALUES FOR R
θJA IN STILL AIR
Data shown for thermal resistance junction–to–ambient (R
θJA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8
1/4
1/2
3/4
R
θJA
50
51
53
55
°C/W
58
59
61
63
28
NOTE 2 — MOUNTING DATA
Mounting Method 1
P.C. Board where available
copper surface is small.
Mounting Method 3
P.C. Board with
2–1/2
″ x 2–1/2″
copper surface.
BOARD GROUND
PLANE
VECTOR PUSH–IN
TERMINALS T–28
Mounting Method 2
LL
LL
L = 1/2
″
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相关代理商/技术参数 |
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