- 您现在的位置：买卖IC网 > PDF目录153691 > 1N5820RL (MOTOROLA INC) 3 A, 20 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | 1N5820RL |
| 厂商： | MOTOROLA INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, CASE 267-03, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 168K |
| 代理商： | 1N5820RL |
1N5820 1N5821 1N5822
2
Rectifier Device Data
*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol
1N5820
1N5821
1N5822
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
VF
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
TL = 25°C
TL = 100°C
iR
2.0
20
2.0
20
2.0
20
mA
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32
″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
NOTE 1 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
TA(max) = TJ(max) * R
θJAPF(AV) * RθJAPR(AV)
(1)
where TA(max) = Maximum allowable ambient temperature
TJ(max) = Maximum allowable junction temperature
(125
°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
R
θJA = Junction–to–ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
TR = TJ(max) * R
θJAPR(AV)
(2)
Substituting equation (2) into equation (1) yields:
TA(max) = TR * R
θJAPF(AV)
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where TJ = 125°C,
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115
°C.
The data of Figures 1, 2, and 3 is based upon dc conditions. For use
in common rectifier circuits, Table 1 indicates suggested factors for
an equivalent dc voltage to use for conservative design, that is:
VR(equiv) = V(FM)
F
(4)
The factor F is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5821 operated in a 12–volt dc sup-
ply using a bridge circuit with capacitive filter such that IDC = 2.0 A
(IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), R
θJA =
40
°C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
NVR(equiv) = (1.41) (10) (0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 108°C
@ VR = 9.2 V and R
θJA = 40°C/W.
Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W
@
I(FM)
I(AV)
+ 10 and IF(AV) + 1.0 A.
Step 4. Find TA(max) from equation (3).
TA(max) = 108 * (0.85) (40) = 74°C.
**Values given are for the 1N5821. Power is slightly lower for the
1N5820 because of its lower forward voltage, and higher for the
1N5822. Variations will be similar for the MBR–prefix devices, using
PF(AV) from Figure 7.
Table 1. Values for Factor F
Circuit
Half Wave
Full Wave, Bridge
Full Wave,
Center Tapped*
Load
Resistive
Capacitive*
Resistive
Capacitive
Resistive
Capacitive
Sine Wave
0.5
1.3
0.5
0.65
1.0
1.3
Square Wave
0.75
1.5
0.75
1.5
*Note that VR(PK) [ 2.0 Vin(PK). Use line to center tap voltage for Vin.
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5821RL | 3 A, 30 V, SILICON, RECTIFIER DIODE |
| 1N5821 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5913BRL | 3.3 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 1N5914BRL | 3.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 1N5919BRL | 5.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5820RLG | 功能描述:肖特基二极管与整流器 3A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5820RLG | 制造商:ON Semiconductor 功能描述:Schottky Rectifier 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 3A 20V DO-201AD |
| 1N5820S | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| 1N5820-T | 功能描述:肖特基二极管与整流器 Vr/20V Io/3A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5820-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 20V 3A 2-Pin DO-201AD T/R |
发布紧急采购，3分钟左右您将得到回复。