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参数资料
| 型号： | 1N5820RLG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 103K |
| 代理商： | 1N5820RLG |
1N5820, 1N5821, 1N5822
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
V
NonRepetitive Peak Reverse Voltage
V
RSM
24
36
48
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1)
V
R(equiv)
0.2 V
R(dc)
, T
L
= 95
°
C
(R
JA
= 28
°
C/W, P.C. Board Mounting, see Note 5)
I
O
3.0
A
Ambient Temperature
Rated V
R(dc)
, P
F(AV)
= 0
R
JA
= 28
°
C/W
T
A
90
85
80
°
C
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75
°
C)
I
FSM
80 (for one cycle)
A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
T
J
, T
stg
65 to +125
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*THERMAL CHARACTERISTICS
(Note 5)
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
28
°
C/W
*ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless otherwise noted) (Note 1)
Characteristic
Symbol
1N5820
1N5821
1N5822
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 Amp)
(i
F
= 3.0 Amp)
(i
F
= 9.4 Amp)
V
F
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
V
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
T
L
= 25
°
C
T
L
= 100
°
C
1. Lead Temperature reference is cathode lead 1/32
″
from case.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N582022.
i
R
2.0
20
2.0
20
2.0
20
mA
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5821G | Axial Lead Rectifiers |
| 1N5821RLG | Axial Lead Rectifiers |
| 1N5822G | Axial Lead Rectifiers |
| 1N5822RLG | Axial Lead Rectifiers |
| 1N5920B | Zener Voltage Regulator Diode(6.2V齐纳电压，齐纳稳压二极管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5820RLG | 制造商:ON Semiconductor 功能描述:Schottky Rectifier 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 3A 20V DO-201AD |
| 1N5820S | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| 1N5820-T | 功能描述:肖特基二极管与整流器 Vr/20V Io/3A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5820-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 20V 3A 2-Pin DO-201AD T/R |
| 1N5820-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER DIODE |
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