参数资料
型号: 1N5821RLG
厂商: ON SEMICONDUCTOR
元件分类: 参考电压二极管
英文描述: Axial Lead Rectifiers
中文描述: 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
封装: LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
文件页数: 1/8页
文件大小: 103K
代理商: 1N5821RLG
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 9
1
Publication Order Number:
1N5820/D
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
lowvoltage, highfrequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
Extremely Low V
F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
the part number
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 26705
(DO201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
http://onsemi.com
A
1N582x
x
YY
WW
= Assembly Location
= Device Code
= 0, 1, or 2
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
A
1N
582x
YYWW
相关PDF资料
PDF描述
1N5822G Axial Lead Rectifiers
1N5822RLG Axial Lead Rectifiers
1N5920B Zener Voltage Regulator Diode(6.2V齐纳电压,齐纳稳压二极管)
1N5914B Zener Voltage Regulator Diode(3.6V齐纳电压,齐纳稳压二极管)
1N5917B Zener Voltage Regulator Diode(4.7V齐纳电压,齐纳稳压二极管)
相关代理商/技术参数
参数描述
1N5821S 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES
1N5821-T 功能描述:肖特基二极管与整流器 Vr/30V Io/3A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
1N5821-T/R 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 30V 3A 2-Pin DO-201AD T/R
1N5821-T3 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER DIODE
1N5821-TB 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER RECTIFIER