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参数资料
| 型号： | 1N5821RLG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 103K |
| 代理商： | 1N5821RLG |
1N5820, 1N5821, 1N5822
http://onsemi.com
4
NOTE 3 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V
RWM
. Proper derating may be
accomplished by use of equation (1).
T
A(max)
= T
J(max)
R
JA
P
F(AV)
where T
A(max)
= Maximum allowable ambient temperature
T
J(max)
= Maximum allowable junction temperature
(125
°
C or the temperature at which thermal
runaway occurs, whichever is lowest)
P
F(AV)
= Average forward power dissipation
P
R(AV)
= Average reverse power dissipation
R
JA
= Junctiontoambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
T
R
= T
J(max)
R
JA
P
R(AV)
R
JA
P
R(AV)
(1)
(2)
Substituting equation (2) into equation (1) yields:
T
A(max)
= T
R
R
JA
P
F(AV)
Inspection of equations (2) and (3) reveals that T
R
is the
ambient temperature at which thermal runaway occurs or
where T
J
= 125
°
C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115
°
C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
(3)
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
V
R(equiv)
= V
(FM)
F
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find T
A(max)
for 1N5821 operated in a
12volt dc supply using a bridge circuit with capacitive filter
such that I
DC
= 2.0 A (I
F(AV)
= 1.0 A), I
(FM)
/I
(AV)
= 10, Input
Voltage = 10 V
(rms)
, R
JA
=
40
°
C/W.
Step 1. Find V
R(equiv).
Read F = 0.65 from Table 1,
V
R(equiv)
= (1.41) (10) (0.65) = 9.2 V.
Step 2. Find T
R
from Figure 2. Read T
R
= 108
°
C
@ V
R
= 9.2 V and R
JA
= 40
°
C/W.
Step 3. Find P
F(AV)
from Figure 6. **Read P
F(AV)
= 0.85 W
@I(FM)
I(AV)
Step 4. Find T
A(max)
from equation (3).
T
A(max)
= 108
**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
MBRprefix devices, using P
F(AV)
from Figure 6.
(4)
10and IF(AV)
1.0 A.
(0.85) (40) = 74
°
C.
Table 1. Values for Factor F
Circuit
Half Wave
Full Wave, Bridge
Full Wave,
Center Tapped
*
Load
Resistive
Capacitive*
Resistive
Capacitive
Resistive
Capacitive
Sine Wave
0.5
1.3
0.5
0.65
1.0
1.3
Square Wave
0.75
1.5
0.75
0.75
1.5
1.5
*Note that V
R(PK)
Use line to center tap voltage for V
in.
2.0 V
in(PK)
.
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PDF描述 |
|---|---|
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| 1N5822RLG | Axial Lead Rectifiers |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5821S | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| 1N5821-T | 功能描述:肖特基二极管与整流器 Vr/30V Io/3A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5821-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 30V 3A 2-Pin DO-201AD T/R |
| 1N5821-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER DIODE |
| 1N5821-TB | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER RECTIFIER |
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