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参数资料
| 型号： | 1N5822G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 103K |
| 代理商： | 1N5822G |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 9
1
Publication Order Number:
1N5820/D
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
lowvoltage, highfrequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
Extremely Low V
F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
the part number
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 26705
(DO201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
http://onsemi.com
A
1N582x
x
YY
WW
= Assembly Location
= Device Code
= 0, 1, or 2
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
A
1N
582x
YYWW
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5822RLG | Axial Lead Rectifiers |
| 1N5920B | Zener Voltage Regulator Diode(6.2V齐纳电压，齐纳稳压二极管) |
| 1N5914B | Zener Voltage Regulator Diode(3.6V齐纳电压，齐纳稳压二极管) |
| 1N5917B | Zener Voltage Regulator Diode(4.7V齐纳电压，齐纳稳压二极管) |
| 1N5919B | Zener Voltage Regulator Diode(5.6V齐纳电压，齐纳稳压二极管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5822-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifier |
| 1N5822G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| 1N5822H | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| 1N5822HA0G | 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:带盒（TB） 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:40V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:525mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
| 1N5822HB0G | 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:散装 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:40V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:525mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
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