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参数资料
| 型号： | 1N5822G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 103K |
| 代理商： | 1N5822G |
1N5820, 1N5821, 1N5822
http://onsemi.com
6
3.0
0.1
I
F(AV)
, AVERAGE FORWARD CURRENT (AMP)
Figure 6. Forward Power Dissipation 1N582022
10
7.0
5.0
0.7
0.5
0.1
5.0
P
0.2
0.3
0.5
2.0
,
F
3.0
2.0
1.0
0.3
0.2
0.7 1.0
7.0 10
dc
SQUARE WAVE
T
J
≈
125
°
C
SINE WAVE
I(FM)
I(AV)
(ResistiveLoad)
Capacitive
Loads
5.0
10
20
T
A(A)
T
A(K)
T
L(A)
T
C(A)
T
J
T
C(K)
T
L(K)
P
D
R
S(A)
R
L(A)
R
J(A)
R
J(K
)
R
L(K)
R
S(K)
NOTE 4 APPROXIMATE THERMAL CIRCUIT MODEL
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
T
A
= Ambient Temperature
T
L
= Lead Temperature
R
S
= Thermal Resistance, Heatsink to Ambient
R
L
= Thermal Resistance, LeadtoHeatsink
R
J
= Thermal Resistance, JunctiontoCase
P
D
= Total Power Dissipation = P
F
+ P
R
P
F
= Forward Power Dissipation
P
R
= Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
R
L
= 42
°
C/W/in typically and 48
°
C/W/in maximum
R
J
= 10
°
C/W typically and 16
°
C/W maximum
The maximum lead temperature may be found as follows:
T
L
= T
J(max)
T
JL
where
T
JL
R
JL
· P
D
T
C
= Case Temperature
T
J
= Junction Temperature
TYPICAL VALUES FOR
R
JA
IN STILL AIR
Data shown for thermal resistance junctiontoambient (R
JA
)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8
1/4
1/2
3/4
R
JA
50
51
53
55
°
C/W
°
C/W
°
C/W
58
59
61
63
28
NOTE 5 — MOUNTING DATA
Mounting Method 1
P.C. Board where available
copper surface is small.
Mounting Method 3
P.C. Board with
21/2, x 21/2,
copper surface.
BOARD GROUND
PLANE
VECTOR PUSHIN
TERMINALS T28
Mounting Method 2
ééééééé
ééééééé
L
L
éééééééé
éééééééé
é
é
é
é
é
L = 1/2
″
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5822-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifier |
| 1N5822G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| 1N5822H | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| 1N5822HA0G | 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:带盒（TB） 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:40V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:525mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
| 1N5822HB0G | 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:散装 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:40V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:525mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
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