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参数资料
| 型号： | 1N5822G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 103K |
| 代理商： | 1N5822G |
1N5820, 1N5821, 1N5822
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
V
NonRepetitive Peak Reverse Voltage
V
RSM
24
36
48
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1)
V
R(equiv)
0.2 V
R(dc)
, T
L
= 95
°
C
(R
JA
= 28
°
C/W, P.C. Board Mounting, see Note 5)
I
O
3.0
A
Ambient Temperature
Rated V
R(dc)
, P
F(AV)
= 0
R
JA
= 28
°
C/W
T
A
90
85
80
°
C
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75
°
C)
I
FSM
80 (for one cycle)
A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
T
J
, T
stg
65 to +125
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*THERMAL CHARACTERISTICS
(Note 5)
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
28
°
C/W
*ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless otherwise noted) (Note 1)
Characteristic
Symbol
1N5820
1N5821
1N5822
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 Amp)
(i
F
= 3.0 Amp)
(i
F
= 9.4 Amp)
V
F
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
V
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
T
L
= 25
°
C
T
L
= 100
°
C
1. Lead Temperature reference is cathode lead 1/32
″
from case.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N582022.
i
R
2.0
20
2.0
20
2.0
20
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5822-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifier |
| 1N5822G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| 1N5822H | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| 1N5822HA0G | 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:带盒（TB） 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:40V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:525mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
| 1N5822HB0G | 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:散装 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:40V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:525mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
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