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| 型号： | 1N5821RLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 123K |
| 描述： | DIODE SCHOTTKY 30V 3A DO201AD |
| 产品目录绘图： | Rectifier DO-201AD Pkg |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 2mA @ 30V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AA，DO-27，轴向 |
| 供应商设备封装： | DO-201AD |
| 包装： | 剪切带 (CT) |
| 产品目录页面： | 1567 (CN2011-ZH PDF) |
| 其它名称： | 1N5821RLGOSCT |
    1N5820, 1N5821, 1N5822 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified Forward Current (Note 1) VR(equiv) 0.2 V R(dc), TL = 95 °C (RJA = 28 °C/W, P.C. Board Mounting, see Note 5) IO 3.0 A Ambient Temperature Rated VR(dc), PF(AV) = 0 RJA = 28 °C/W TA 90 85 80 °C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75 °C) IFSM 80 (for one cycle) A Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, Tstg -65 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *THERMAL CHARACTERISTICS (Note 5) Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RJA 28 °C/W *ELECTRICAL CHARACTERISTICS (T L = 25 °C unless otherwise noted) (Note 1) Characteristic Symbol 1N5820 1N5821 1N5822 Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) VF 0.370 0.475 0.850 0.380 0.500 0.900 0.390 0.525 0.950 V Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) TL = 25 °C TL = 100 °C iR 2.0 20 2.0 20 2.0 20 mA 1. Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820-22. |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5821S | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| 1N5821-T | 功能描述:肖特基二极管与整流器 Vr/30V Io/3A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5821-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 30V 3A 2-Pin DO-201AD T/R |
| 1N5821-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER DIODE |
| 1N5821-TB | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER RECTIFIER |
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