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参数资料
| 型号： | 1N5821RLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 123K |
| 描述： | DIODE SCHOTTKY 30V 3A DO201AD |
| 产品目录绘图： | Rectifier DO-201AD Pkg |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 2mA @ 30V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AA，DO-27，轴向 |
| 供应商设备封装： | DO-201AD |
| 包装： | 剪切带 (CT) |
| 产品目录页面： | 1567 (CN2011-ZH PDF) |
| 其它名称： | 1N5821RLGOSCT |
       1N5820, 1N5821, 1N5822 http://onsemi.com 5 Figure 1. Maximum Reference Temperature 1N5820 Figure 2. Maximum Reference Temperature 1N5821 Figure 3. Maximum Reference Temperature 1N5822 Figure 4. Steady-State Thermal Resistance 3.0 4.0 7.0 10 2015 75 2.0 VR, REVERSE VOLTAGE (VOLTS) 115 125 105 5.0 7.0 10 15 20 3/8 4/8 5/8 6/8 7/8 1.030 75 4.0 VR, REVERSE VOLTAGE (VOLTS) 125 115 105 95 85 L, LEAD LENGTH (INCHES) 1/8 0 0 25 20 15 10 5.0 2/8 40 T R , REFERENCE TEMPERATURE ( C) T R JL , THERMAL RESISTANCE 95 85 5.0 ° 40 35 30 JUNCTION-TO-LEAD ( C/W) ° BOTH LEADS TO HEATSINK, EQUAL LENGTH MAXIMUM TYPICAL , REFERENCE TEMPERATURE ( C) R ° RJA ( °C/W) = 70 50 40 28 20 15 10 8.0 3.0 4.0 7.0 10 2015 VR, REVERSE VOLTAGE (VOLTS) 115 105 T R , REFERENCE TEMPERATURE ( C) 95 85 75 5.0 ° RJA ( °C/W) = 70 50 40 28 20 15 10 8.0 125 30 RJA ( °C/W) = 70 50 40 28 20 15 10 8.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 0.05 0.03 0.02 0.01 0.1 t, TIME (ms) 0.5 0.3 0.2 1.0 LEAD LENGTH = 1/4″ Ppk Ppk tp t1 TIME DUTY CYCLE = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. TJL = P pk ? R JL [D + (1 - D) ? r(t 1 + t p) + r(tp) - r(t1)] where: TJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + t p) = normalized value of transient thermal resistance at time t1 + t p, etc. Figure 5. Thermal Response 20 k The temperature of the lead should be measured using a ther‐ mocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = T L + TJL |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5821S | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| 1N5821-T | 功能描述:肖特基二极管与整流器 Vr/30V Io/3A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5821-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 30V 3A 2-Pin DO-201AD T/R |
| 1N5821-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER DIODE |
| 1N5821-TB | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER RECTIFIER |
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