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参数资料
| 型号： | 1N6379RL4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, MOSORB, CASE 41A-04, 2 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 85K |
| 代理商： | 1N6379RL4 |
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ T
L
≤
25
°
C
P
PK
1500
W
Steady State Power Dissipation @ T
L
≤
75
°
C, Lead Length = 3/8
″
Derated above T
L
= 75
°
C
P
D
5.0
20
W
mW/
°
C
Thermal Resistance, JunctiontoLead
R
JL
20
°
C/W
Forward Surge Current (Note 2)
@ T
A
= 25
°
C
I
FSM
200
A
Operating and Storage Temperature Range
T
J
, T
stg
65 to +175
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25
°
C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 – 1N6389 (ICTE10C ICTE36C, MPTE8C MPTE45C) for Bidirectional Devices.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Variation of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
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| 1N6380RL4 | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6379RL4G | 功能描述:TVS 二极管 - 瞬态电压抑制器 25.9V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6380 | 功能描述:TVS 二极管 - 瞬态电压抑制器 42.2V 1500W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6380G | 功能描述:TVS 二极管 - 瞬态电压抑制器 42.2V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6380G | 制造商:ON Semiconductor 功能描述:TVS Diode |
| 1N6380RL4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 42.2V 1500W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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