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参数资料
| 型号： | 20MT120UFAPBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 20 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, MTP, 16 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 219K |
| 代理商： | 20MT120UFAPBF |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 94470
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 03-Aug-10
20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Note
(1) ICES includes also opposite leg overall leakage
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 250 μA
1200
-
V
Temperature coefficient of breakdown voltage
V
(BR)CES/TJ
VGE = 0 V, IC = 3 mA (25 to 125 °C)
-
+ 1.3
-
V/°C
Collector to emitter saturation voltage
VCE(on)
VGE = 15 V, IC = 20 A
-
3.29
3.59
V
VGE = 15 V, IC = 40 A
-
4.42
4.66
VGE = 15 V, IC = 20 A, TJ = 125 °C
-
3.87
4.11
VGE = 15 V, IC = 40 A, TJ = 125 °C
-
5.32
5.70
VGE = 15 V, IC = 20 A, TJ = 150 °C
-
3.99
4.27
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
4
-
6
Temperature coefficient of threshold voltage
VGE(th)/TJ
VCE = VGE, IC = 3 mA (25 to 125 °C)
-
- 14
-
mV/°C
Transconductance
gfe
VCE = 50 V, IC = 20 A, PW = 80 μs
-
17.5
-
S
Zero gate voltage collector current
ICES (1)
VGE = 0 V, VCE = 1200 V, TJ = 25 °C
-
250
μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.7
3.0
mA
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
-
2.9
9.0
Gate to emitter leakage current
IGES
VGE = ± 20 V
-
± 250
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Qg
IC = 20 A
VCC = 600 V
VGE = 15 V
-
176
264
nC
Gate to emitter charge (turn-on)
Qge
-19
30
Gate to collector charge (turn-on)
Qgc
-
89
134
Turn-on switching loss
Eon
VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 25 °C,
energy losses include tail and
diode reverse recovery
-
0.513
0.770
mJ
Turn-off switching loss
Eoff
-
0.402
0.603
Total switching loss
Etot
-
0.915
1.373
Turn-on switching loss
Eon
VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 125 °C,
energy losses include tail and
diode reverse recovery
-
0.930
1.395
Turn-off switching loss
Eoff
-
0.610
0.915
Total switching loss
Etot
-
1.540
2.310
Input capacitance
Cies
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
-
2530
3790
pF
Output capacitance
Coes
-
344
516
Reverse transfer capacitance
Cres
-
78
117
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 120 A
VCC = 1000 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
Fullsquare
Short circuit safe operating area
SCSOA
TJ = 150 °C
VCC = 900 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
10
-
μs
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