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参数资料
| 型号： | 20MT120UFAPBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 20 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, MTP, 16 PIN |
| 文件页数： | 9/11页 |
| 文件大小： | 219K |
| 代理商： | 20MT120UFAPBF |
Document Number: 94470
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 03-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
7
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Vishay Semiconductors
Fig. 19 - Typical Diode Irr vs. dIF/dt
VCC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C
Fig. 20 - Typical Diode Qrr
VCC = 400 V; VGE = 15 V; TJ = 150 °C
Fig. 21 - Typical Capacitance vs. VCE
VGE = 0 V; f = 1 MHz
Fig. 22 - Typical Gate Charge vs. VGE
ICE = 5.0 A; L = 600 μH
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
0
200
400
600
800
1000
diF /dt (A/s)
10
15
20
25
30
35
40
I R
R
(A
)
0
200
400
600
800
1000
1200
diF /dt (A/s)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q
R
(
C
)
5.0
Ω
30
Ω
10
Ω
50
Ω
30A
20A
10A
0
20
40
60
80
100
VCE (V)
10
100
1000
10000
C
a
p
a
c
it
a
n
c
e
(p
F
)
Cies
Coes
Cres
0
40
80
120
160
200
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(V
)
600V
t1, Rectangular Pulse Duration (sec)
Thermal
Response
(Z
thJC
)
0.0001
0.001
0.01
0.1
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Response)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D =0.01
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