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参数资料
| 型号： | 20MT120UFAPBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 20 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, MTP, 16 PIN |
| 文件页数： | 8/11页 |
| 文件大小： | 219K |
| 代理商： | 20MT120UFAPBF |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 94470
6
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 03-Aug-10
20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Fig. 13 - Typical Energy Loss vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 5 ; VGE = 15 V
Fig. 14 - Typical Switching Time vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 100 ; VGE = 15 V
Fig. 15 - Typical Energy Loss vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
Fig. 16 - Typical Switching Time vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
Fig. 17 - Typical Diode Irr vs. IF
TJ = 150 °C
Fig. 18 - Typical Diode Irr vs. Rg
TJ = 150 °C; IF = 5.0 A
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RG = 5.0Ω
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RG =50 Ω
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)
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