- 您现在的位置：买卖IC网 > PDF目录4234 > 24LC512-E/SN (Microchip Technology)EEPROM 512KB 2.5V 400KHZ 8SOIC PDF资料下载
参数资料
| 型号： | 24LC512-E/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 10/36页 |
| 文件大小： | 0K |
| 描述： | EEPROM 512KB 2.5V 400KHZ 8SOIC |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页当前第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页
24AA512/24LC512/24FC512
6.0
WRITE OPERATIONS
6.2
Page Write
6.1
Byte Write
The write control byte, word address and the first data
byte are transmitted to the 24XX512 in the same way
Following the Start condition from the master, the
control code (four bits), the Chip Select (three bits) and
the R/W bit (which is a logic low) are clocked onto the
bus by the master transmitter. This indicates to the
addressed slave receiver that the address high byte will
follow after it has generated an Acknowledge bit during
the ninth clock cycle. Therefore, the next byte
transmitted by the master is the high-order byte of the
word address and will be written into the Address
Pointer of the 24XX512. The next byte is the Least
Significant Address Byte. After receiving another
Acknowledge signal from the 24XX512, the master
device will transmit the data word to be written into the
addressed memory location. The 24XX512 acknowl-
edges again and the master generates a Stop
condition. This initiates the internal write cycle and
as in a byte write. But instead of generating a Stop
condition, the master transmits up to 127 additional
bytes, which are temporarily stored in the on-chip page
buffer and will be written into memory after the master
has transmitted a Stop condition. After receipt of each
word, the seven lower Address Pointer bits are inter-
nally incremented by one. If the master should transmit
more than 128 bytes prior to generating the Stop con-
dition, the address counter will roll over and the previ-
ously received data will be overwritten. As with the byte
write operation, once the Stop condition is received, an
internal write cycle will begin (Figure 6-2). If an attempt
is made to write to the array with the WP pin held high,
the device will acknowledge the command, but no write
cycle will occur, no data will be written and the device
will immediately accept a new command.
during this time, the 24XX512 will not generate
Acknowledge signals (Figure 6-1). If an attempt is
6.3
Write Protection
made to write to the array with the WP pin held high, the
device will acknowledge the command, but no write
cycle will occur, no data will be written and the device
will immediately accept a new command. After a byte
Write command, the internal address counter will point
to the address location following the one that was just
written.
The WP pin allows the user to write-protect the entire
array (0000-FFFF) when the pin is tied to V CC . If tied to
V SS the write protection is disabled. The WP pin is
sampled at the Stop bit for every Write command
(Figure 1-1). Toggling the WP pin after the Stop bit will
have no effect on the execution of the write cycle.
Note:
When doing a write of less than 128 bytes
the data in the rest of the page is refreshed
along with the data bytes being written.
This will force the entire page to endure a
write cycle, for this reason endurance is
specified per page.
Note:
Page write operations are limited to writing
bytes within a single physical page,
regardless of the number of bytes
actually being written. Physical page
boundaries start at addresses that are
integer multiples of the page buffer size (or
‘page size’) and end at addresses that are
integer multiples of [page size – 1]. If a
Page Write command attempts to write
across a physical page boundary, the
result is that the data wraps around to the
beginning of the current page (overwriting
data previously stored there), instead of
being written to the next page as might be
expected. It is therefore necessary for the
application software to prevent page write
operations that would attempt to cross a
page boundary.
DS21754M-page 10
? 2010 Microchip Technology Inc.
相关PDF资料 |
PDF描述 |
|---|---|
| SST39SF020A-70-4I-NHE | IC FLASH MPF 2MBIT 70NS 32PLCC |
| SST39LF040-55-4C-NHE | IC FLASH MPF 4MBIT 55NS 32PLCC |
| SST39VF1602C-70-4I-EKE | IC FLASH MPF 16MBIT 70NS 48TSOP |
| SST39WF800B-70-4C-MAQE | IC FLASH MPF 8MBIT 70NS 48WFBGA |
| SST39VF1602C-70-4C-EKE | IC FLASH MPF 16MBIT 70NS 48TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 24LC512-I/MF | 功能描述:电可擦除可编程只读存储器 64kx8 - 2.5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 24LC512-I/MF | 制造商:Microchip Technology Inc 功能描述:Serial EEPROM IC |
| 24LC512-I/MS | 制造商:Microchip Technology Inc 功能描述:512K, 64K X 8, 2.5V SER EE, IND - Rail/Tube 制造商:Microchip Technology Inc 功能描述:IC EEPROM 512KBIT 400KHZ 8MSOP 制造商:Microchip Technology Inc 功能描述:512K, 64K X 8, 2.5V SER EE, IND, 8 MSOP 3x3mm TUBE |
| 24LC512-I/P | 功能描述:电可擦除可编程只读存储器 64kx8 - 2.5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 24LC512-I/P | 制造商:Microchip Technology Inc 功能描述:EEPROM SERIAL 512K 24LC512 DIP8 |
发布紧急采购，3分钟左右您将得到回复。