- 您现在的位置：买卖IC网 > PDF目录4234 > SST39VF1602C-70-4C-EKE (Microchip Technology)IC FLASH MPF 16MBIT 70NS 48TSOP PDF资料下载
参数资料
| 型号： | SST39VF1602C-70-4C-EKE |
| 厂商： | Microchip Technology |
| 文件页数： | 1/33页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 16MBIT 70NS 48TSOP |
| 标准包装： | 96 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M (1M x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 48-TSOP |
| 包装： | 托盘 |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页
16 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
FEATURES:
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
Data Sheet
? Organized as 1M x16: SST39VF1601C/1602C
? Single Voltage Read and Write Operations
– 2.7-3.6V
? Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
? Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 μA (typical)
– Auto Low Power Mode: 3 μA (typical)
? Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 8 KWord)
– Bottom Block-Protection (bottom 8 KWord)
? Sector-Erase Capability
– Uniform 2 KWord sectors
? Block-Erase Capability
– Flexible block architecture; one 8-, two 4-, one
16-, and thirty one 32-KWord blocks
? Chip-Erase Capability
? Erase-Suspend/Erase-Resume Capabilities
? Hardware Reset Pin (RST#)
? Latched Address and Data
PRODUCT DESCRIPTION
The SST39VF1601C and SST39VF1602C devices are
1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manu-
factured with SST proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST39VF160xC writes (Program or Erase) with a
2.7-3.6V power supply. These devices conform to JEDEC
standard pinouts for x16 memories.
Featuring high performance Word-Program, the
SST39VF1601C/1602C devices provide a typical Word-
Program time of 7 μsec. These devices use Toggle Bit,
Data# Polling, or the RY/BY# pin to indicate the completion
of Program operation. To protect against inadvertent write,
they have on-chip hardware and Software Data Protection
schemes. Designed, manufactured, and tested for a wide
spectrum of applications, these devices are offered with a
guaranteed typical endurance of 100,000 cycles. Data
retention is rated at greater than 100 years.
The SST39VF1601C/1602C devices are suited for applica-
tions that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
?2010 Silicon Storage Technology, Inc.
S71380-04-000 05/10
1
? Security-ID Feature
– SST: 128 bits; User: 128 words
? Fast Read Access Time:
– 70 ns
? Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 μs (typical)
? Automatic Write Timing
– Internal V PP Generation
? End-of-Write Detection
– Toggle Bits
– Data# Polling
– Ready/Busy# Pin
? CMOS I/O Compatibility
? JEDEC Standard
– Flash EEPROM Pinouts and command sets
? Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (4mm x 6mm)
? All devices are RoHS compliant
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39VF1601C/1602C are offered in 48-lead TSOP, 48-
ball TFBGA, and 48-ball WFBGA packages. See Figures
2, 3, and 4 for pin assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| SST39LF800A-55-4C-B3KE-T | IC FLASH MPF 8MBIT 55NS 48TFBGA |
| XCV300E-6FG256I | IC FPGA 1.8V I-TEMP 256-FBGA |
| XCV200E-8PQ240C | IC FPGA 1.8V C-TEMP 240-PQFP |
| SST39WF400B-70-4I-MAQE | IC FLASH MPF 4MBIT 70NS 48WFBGA |
| XC2V1000-4FGG256I | IC FPGA VIRTEX-II 2M 256-FBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39VF1602C-70-4C-MAQE | 功能描述:闪存 2.7V to 3.6V 16Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF1602C-70-4I-B3KE | 功能描述:闪存 16M (1Mx16) 70ns Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF1602C-70-4I-B3KE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF1602C-70-4I-EKE | 功能描述:闪存 16M (1Mx16) 70ns Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF1602C-70-4I-MAQE | 功能描述:闪存 2.7V to 3.6V 16Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。