参数资料
型号: 25LC256-I/MF
厂商: Microchip Technology
文件页数: 10/26页
文件大小: 0K
描述: IC EEPROM 256KBIT 10MHZ 8DFN
标准包装: 60
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 256K (32K x 8)
速度: 10MHz
接口: SPI 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-S(6x5)
包装: 管件
产品目录页面: 1450 (CN2011-ZH PDF)
25AA256/25LC256
2.5 Read Status Register Instruction
( RDSR )
The Read Status Register instruction ( RDSR ) provides
access to the STATUS register. The STATUS register
may be read at any time, even during a write cycle. The
STATUS register is formatted as follows:
The Write Enable Latch (WEL) bit indicates the status
of the write enable latch and is read-only. When set to
a ‘ 1 ’, the latch allows writes to the array, when set to a
‘ 0 ’, the latch prohibits writes to the array. The state of
this bit can always be updated via the WREN or WRDI
commands, regardless of the state of write protection
on the STATUS register. These commands are shown
in Figure 2-4 and Figure 2-5.
TABLE 2-2:
STATUS REGISTER
The Block Protection (BP0 and BP1) bits indicate
7 6 5 4 3 2 1
W/R - - - W/R W/R R
WPEN x x x BP1 BP0 WEL
W/R = writable/readable. R = read-only.
0
R
WIP
which blocks are currently write-protected. These bits
are set by the user issuing the WRSR instruction. These
bits are nonvolatile, and are shown in Table 2-3.
See Figure 2-6 for the RDSR timing sequence.
The Write-In-Process (WIP) bit indicates whether the
25XX256 is busy with a write operation. When set to a
‘ 1 ’, a write is in progress, when set to a ‘ 0 ’, no write is
in progress. This bit is read-only.
FIGURE 2-6:
CS
READ STATUS REGISTER TIMING SEQUENCE ( RDSR )
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Instruction
SI
0
0
0
0
0
1
0
1
SO
High-Impedance
7
Data from STATUS Register
6 5 4 3 2
1
0
DS21822F-page 10
? 2007 Microchip Technology Inc.
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