参数资料
| 型号： | 25LC256-I/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 4/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 10MHZ 8DFN |
| 标准包装： | 60 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 10MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 管件 |
| 产品目录页面： | 1450 (CN2011-ZH PDF) |
25AA256/25LC256
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
AC CHARACTERISTICS
Industrial (I): T A = -40°C to +85°C
Automotive (E): T A = -40°C to +125°C
V CC = 1.8V to 5.5V
V CC = 2.5V to 5.5V
Param.
No.
18
Sym.
T HZ
Characteristic
HOLD Low to Output
High-Z
Min.
30
60
Max.
—
—
Units
ns
ns
Test Conditions
4.5V ≤ Vcc ≤ 5.5V (Note 1)
2.5V ≤ Vcc < 4.5V (Note 1)
160
—
ns
1.8V ≤ Vcc < 2.5V (Note 1)
19
20
T HV
T WC
HOLD High to Output
Valid
Internal Write Cycle
30
60
160
—
—
—
—
5
ns
ns
ns
ms
4.5V ≤ Vcc ≤ 5.5V
2.5V ≤ Vcc < 4.5V
1.8V ≤ Vcc < 2.5V
(N OTE 2)
Time
21
—
Endurance
1M
—
E/W
(N OTE 3)
Cycles
Note 1: This parameter is periodically sampled and not 100% tested.
2: T WC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance? Model which can be obtained from Microchip’s web site
at www.microchip.com.
TABLE 1-3:
AC Waveform:
AC TEST CONDITIONS
V LO = 0.2V
V HI = V CC – 0.2V
V HI = 4.0V
C L = 50 pF
—
(Note 1)
(Note 2)
—
Timing Measurement Reference Level
Input
Output
Note 1: For V CC ≤ 4.0V
2: For V CC > 4.0V
DS21822F-page 4
0.5 V CC
0.5 V CC
? 2007 Microchip Technology Inc.
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