参数资料
型号: 25LC512T-I/MF
厂商: Microchip Technology
文件页数: 10/36页
文件大小: 0K
描述: IC EEPROM 512KBIT 20MHZ 8DFN
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 512K (64K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-S(6x5)
包装: 带卷 (TR)
其它名称: 25LC512T-I/MFTR
25LC512
2.3
Write Enable ( WREN ) and Write
Disable ( WRDI )
?
?
Power-up
WRDI instruction successfully executed
The 25LC512 contains a write enable latch. See
Table 2-4 for the Write-Protect Functionality Matrix.
This latch must be set before any write operation will be
completed internally. The WREN instruction will set the
latch, and the WRDI will reset the latch.
The following is a list of conditions under which the
write enable latch will be reset:
?
?
?
?
?
WRSR instruction successfully executed
WRITE instruction successfully executed
PE instruction successfully executed
SE instruction successfully executed
CE instruction successfully executed
FIGURE 2-4:
WRITE ENABLE SEQUENCE ( WREN )
CS
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
1
0
SO
High-Impedance
FIGURE 2-5:
WRITE DISABLE SEQUENCE ( WRDI )
CS
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
1 0
0
High-Impedance
SO
DS22065C-page 10
? 2010 Microchip Technology Inc.
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