参数资料
| 型号： | 25LC512T-I/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 2/36页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 512KBIT 20MHZ 8DFN |
| 标准包装： | 3,300 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 带卷 (TR) |
| 其它名称： | 25LC512T-I/MFTR |
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25LC512
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V SS ......................................................................................................... -0.6V to V CC +1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
? NOTICE : Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I):
Automotive (E):
T A = -40°C to +85°C
T A = -40°C to +125°C
V CC = 2.5V to 5.5V
V CC = 2.5V to 5.5V
Param.
No.
D001
Sym.
V IH1
Characteristic
High-level input
Min.
.7 V CC
Max.
V CC +1
Units
V
Test Conditions
voltage
D002
D003
D004
V IL1
V IL2
V OL
Low-level input
voltage
Low-level output
-0.3
-0.3
—
0.3 V CC
0.2 V CC
0.4
V
V
V
V CC ??? 2.7V
V CC < 2.7V
I OL = 2.1 mA
voltage
D005
V OH
High-level output
V CC -0.2
—
V
I OH = -400 ? A
voltage
D006
D007
I LI
I LO
Input leakage current
Output leakage
—
—
±1
±1
? A
? A
CS = V CC , V IN = V SS or V CC
CS = V CC , V OUT = V SS or V CC
current
D008
C INT
Internal capacitance
—
7
pF
T A = 25°C, CLK = 1.0 MHz,
(all inputs and
outputs)
V CC = 5.0V (Note)
D009
I CC Read
—
10
mA
V CC = 5.5V; F CLK = 20.0 MHz;
—
SO = Open
Operating current
5
mA
V CC = 2.5V; F CLK = 10.0 MHz;
SO = Open
D010
D011
I CC Write
I CCS
—
—
—
7
5
20
mA
mA
? A
V CC = 5.5V
V CC = 2.5V
CS = V CC = 5.5V, Inputs tied to V CC or
Standby current
—
V SS , 125°C
10
? A
CS = V CC = 5.5V, Inputs tied to V CC or
V SS , 85°C
D012
I CCSPD
Deep power-down
—
2
? A
CS = V CC = 2.5V, Inputs tied to V CC or
current
V SS , 125°C
1
? A
CS = V CC = 2.5V, Inputs tied to V CC or
V SS , 85°C
Note:
This parameter is periodically sampled and not 100% tested.
DS22065C-page 2
? 2010 Microchip Technology Inc.
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| 25LC640 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64K SPI Bus Serial EEPROM |
| 25LC640/S | 功能描述:电可擦除可编程只读存储器 64k, 8K x 8, 2.5V SER EE DIE in WAFFLE PK RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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