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参数资料
| 型号： | 2N3055-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 62K |
| 代理商： | 2N3055-BP |
2N3055
10 Amp
NPN Silicon
Power Transistors
80 W
Features
Designed for general-purpose switching and amplifier applications
With TO-3 package
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
100
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current
10
A
PC
Collector power dissipation
80
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=100mAdc, IB=0)
60
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=100Vdc, IE=0)
---
1.0
mAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0)
---
5.0
mAdc
ICEO
Collector-Emitter Cutoff Current
(VCE=30Vdc, IB=0)
---
0.7
mAdc
ON CHARACTERISTICS
hFE(1)
Forward Current Transfer ratio
(IC=4.0Adc, VCE=4.0Vdc)
20
100
---
hFE(2)
Forward Current Transfer ratio
(IC=10Adc, VCE=4.0Vdc)
5.0
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=4.0Adc, IB=0.4Adc)
---
1.0
Vdc
VBE(on)
Base-Emitter Saturation Voltage
(IC=4.0Adc, VCE=4.0Vdc)
---
1.5
Vdc
fT
Transition Frequency
(VCE=4.0Vdc, IC=1.0Adc, f=1.0MHZ)
2.5
---
MHZ
TO-3
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
1.550
REF
39.37
REF
B
-----
1.050
-----
26.67
C
.250
.335
6.35
8.51
D
.038
.043
0.97
1.09
E
0.55
0.70
1.40
1.77
G
.430
BSC
10.92
BSC
H
.215
BSC
5.46
BSC
K
.440
.480
11.18
12.19
L
.665
BSC
16.89
BSC
N
-----
.830
-----
21.08
Q
.151
.165
3.84
4.19
U
1.187
BSC
30.15
BSC
V
.131
.188
3.33
4.77
A
N
E
D
C
K
PIN 1.
BASE
PIN 2.
EMITTER
CASE.
COLLECTOR
H
V
U
L
GB
Q
1
2
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 4
2006/07/17
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
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相关代理商/技术参数 |
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|---|---|
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| 2N3055H | 功能描述:两极晶体管 - BJT 15A 60V 115W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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