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参数资料
| 型号： | 2N3055-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 62K |
| 代理商： | 2N3055-BP |
MCC
Revision: 4
2006/07/17
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
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相关PDF资料 |
PDF描述 |
|---|---|
| 2N3055A | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3055ESMD | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 2N3055ESMD.MOD | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 2N3055ESMDR4 | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 2N3055E | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3055C | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:N-P-N SILICON POWER TRANSISTOR |
| 2N3055E | 制造商:TT Electronics / Semelab 功能描述:NPN power transistor,15A 2N3055E |
| 2N3055ESMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3055G | 功能描述:两极晶体管 - BJT NPN 15A 60V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3055H | 功能描述:两极晶体管 - BJT 15A 60V 115W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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