参数资料
型号: 2N3634CSM
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: CERAMIC, LCC-3
文件页数: 1/2页
文件大小: 34K
代理商: 2N3634CSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 7745
Issue 1
2N3634CSM
PNP SILICON TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
FEATURES
High Voltage Switching
Low Power Amplifier Applications
Hermetic Ceramic Surface Mount
Package
APPLICATIONS
General Purpose
High Speed Saturated Switching
Screening Options Available
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emmiter – Base Voltage
IC
Collector Current
PD
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C
TJ , TSTG
Operating and Storage Junction Temperature Range
-140V
-5V
-1A
1W
5.71mW/ °C
5W
28.6mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
LCC1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter
PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54
±
0.
13
(0
.10
±
0.
005)
0.
76
±
0.
1
5
(0
.03
±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
A =
3
相关PDF资料
PDF描述
2N3634 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3635 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3634 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3636 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3636 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
相关代理商/技术参数
参数描述
2N3634J 制造商:MINNESOTA MINING AND MFG 功能描述:
2N3634JANTX 制造商:Microsemi Corporation 功能描述:
2N3634L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-5 - Bulk
2N3634UB 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UB LAW - Gel-pak, waffle pack, wafer, diced wafer on film
2N3635 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2