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参数资料
| 型号： | 2N3634CSM |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, LCC-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 34K |
| 代理商： | 2N3634CSM |
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-140
-5.0
-50
-100
40
45
50
150
25
-0.3
-0.5
-0.8
-0.65
-0.9
100
10
75
100
600
3.0
40
160
200
3.0
400
600
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BVCEO
Collector–Emitter Breakdown Voltage1
BVCBO
Collector – Base Breakdown Voltage
BVEBO
Emitter – Base Breakdown Voltage
IEBO
Emitter Cut-off Current
ICBO
Collector Cut-off Current
hFE
DC Current Gain
VCE(sat)
Collector – Emitter Saturation Voltage1
VBE(sat)
Base – Emitter Saturation Voltage
ft
Current Gain Bandwidth Product
Cob
Output Capacitance
Cib
Input Capacitance
hie
Input Impedance
hre
Voltage Feedback Ratio
hfe
Small Signal Current Gain
hoe
Output Admittance
NF
Noise Figure
ton
Turn–On Time
toff
Turn–Off Time
IC = -10mA
IB = 0
IC = -100μAIE = 0
IC = 0
IE = -10μA
VBE = -3.0V
IC = 0
VCB = -100V
IE = 0
IC = -0.1mA
VCE = -10V
IC = -1.0mA
VCE = -10V
IC = -10mA
VCE = -10V
IC = -50mA
VCE = -10V
IC = -150mA
VCE = -10V
IC = -10mA
IB = -1.0mA
IC = -50mA
IB = -5mA
IC = -10mA
IB = -1.0mA
IC = -50mA
IB = -5mA
VCE = -30V
IC = -30mA
f = 100MHz
VCB = -20V
IE = 0
f = 100kHz
VBE = 1.0V
IC = 0
f = 1.0MHz
VCE = -10V
IC = -10mA
f = 1.0kHz
VCE = -10V
IC = -0.5mA
RS = 1.0KΩ
f = 1.0kHz
VCC = -100V
VBE = 4.0V
IC = -50mA IB1 = IB2 =-5mA
V
nA
V
MHz
pF
Ω
x10-4
—
μmhos
dB
ns
OFF CHARACTERISTICS
Document Number 7745
Issue 1
2N3634CSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
μs ,Duty Cycle < 2%
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3634J | 制造商:MINNESOTA MINING AND MFG 功能描述: |
| 2N3634JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3634L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-5 - Bulk |
| 2N3634UB | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UB LAW - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N3635 | 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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