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参数资料
| 型号： | 2N3771 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 1/6页 |
| 文件大小： | 204K |
| 代理商： | 2N3771 |
1
Motorola Bipolar Power Transistor Device Data
High Power NPN Silicon Power
Transistors
. . . designed for linear amplifiers, series pass regulators, and inductive switching
applications.
Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc — 2N3771
IS/b = 2.5 Adc @ VCE = 60 Vdc — 2N3772
*MAXIMUM RATINGS
Rating
Symbol
2N3771
2N3772
Unit
Collector–Emitter Voltage
VCEO
40
60
Vdc
Collector–Emitter Voltage
VCEX
50
80
Vdc
Collector–Base Voltage
VCB
50
100
Vdc
Emitter–Base Voltage
VEB
5.0
7.0
Vdc
Collector Current — Continuous
Peak
IC
30
20
30
Adc
Base Current — Continuous
Peak
IB
7.5
15
5.0
15
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
150
0.855
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N3771, 2N3772
Unit
Thermal Resistance, Junction to Case
θJC
1.17
_C/W
* Indicates JEDEC Registered Data.
200
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
150
100
50
25
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
175
125
75
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3771/D
Motorola, Inc. 1995
2N3771
2N3772
*Motorola Preferred Device
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3773 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3773 | 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3773 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3773 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3791 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3771 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3771/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771_00 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH POWER NPN SILICON TRANSISTOR |
| 2N3771_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771G | 功能描述:两极晶体管 - BJT 30A 40V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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