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参数资料
| 型号： | 2N3771 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 2/6页 |
| 文件大小： | 204K |
| 代理商： | 2N3771 |
2N3771 2N3772
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
*Collector–Emitter Sustaining Voltage (1)
2N3771
(IC = 0.2 Adc, IB = 0)
2N3772
VCEO(sus)
40
60
—
Vdc
Collector–Emitter Sustaining Voltage
2N3771
(IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms)
2N3772
VCEX(sus)
50
80
—
Vdc
Collector–Emitter Sustaining Voltage
2N3771
(IC = 0.2 Adc, RBE = 100 Ohms)
2N3772
VCER(sus)
45
70
—
Vdc
*Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N3771
(VCE = 50 Vdc, IB = 0)
2N3772
(VCE = 25 Vdc, IB = 0)
ICEO
—
10
mAdc
*Collector Cutoff Current
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc)
2N3771
(VCE = 100 Vdc, VEB(off) = 1.5 Vdc)
2N3772
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc)
2N6257
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N3771
2N3772
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEV
—
2.0
5.0
4.0
10
mAdc
*Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
2N3771
(VCB = 100 Vdc, IE = 0)
2N3772
ICBO
—
2.0
5.0
mAdc
*Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
2N3771
(VBE = 7.0 Vdc, IC = 0)
2N3772
IEBO
—
5.0
mAdc
*ON CHARACTERISTICS
DC Current Gain (1)
(IC = 15 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 10 Adc, VCE = 4.0 Vdc)
2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 20 Adc, VCE = 4.0 Vdc)
2N3772
hFE
15
5.0
60
—
—
Collector–Emitter Saturation Voltage
(IC = 15 Adc, IB = 1.5 Adc)
2N3771
(IC = 10 Adc, IB = 1.0 Adc)
2N3772
(IC = 30 Adc, IB = 6.0 Adc)
2N3771
(IC = 20 Adc, IB = 4.0 Adc)
2N3772
VCE(sat)
—
2.0
1.4
4.0
Vdc
Base–Emitter On Voltage
(IC = 15 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 10 Adc, VCE = 4.0 Vdc)
2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
2.7
2.2
Vdc
*DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)
fT
0.2
—
MHz
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
40
—
—
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non–repetitive)
(VCE = 40 Vdc)
2N3771
(VCE = 60 Vdc)
2N3772
IS/b
3.75
2.5
—
Adc
* Indicates JEDEC Registered Data.
(1) Pulse Test: 300
s, Rep. Rate 60 cps.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3771 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3771/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771_00 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH POWER NPN SILICON TRANSISTOR |
| 2N3771_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771G | 功能描述:两极晶体管 - BJT 30A 40V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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