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参数资料
| 型号： | 2N3771 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 3/6页 |
| 文件大小： | 204K |
| 代理商： | 2N3771 |
2N3771 2N3772
3
Motorola Bipolar Power Transistor Device Data
Figure 2. Thermal Response — 2N3771, 2N3772
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
2000
θJC(t) = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.02
1000
40
1.0
Figure 3. Active–Region Safe Operating Area
— 2N3771, 2N3772
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
30
20
10
2.0
3.0
5.0
10
30
50
70 100
7.0
I C
,COLLECT
OR
CURRENT
(AMP)
dc
5.0
7.0
3.0
100
s
1.0 ms
20
2N3771
2N3772, (dc)
40
s
100 ms
500 ms
PULSE CURVES APPLY
FOR ALL DEVICES
2N3771
2N3772
200
s
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
TC = 25°C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) < 200_C. TJ(pk) may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, TJ(pk) will be found to be less than TJ(max)
for pulse widths of 1 ms and less. When using Motorola
transistors, it is permissible to increase the pulse power limits
until limited by TJ(max).
Figure 4. Switching Time Test Circuit
+11 V
25
s
0
– 9.0 V
RB
– 4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
10
0.3
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
0.01
0.5 0.7 1.0
2.0
5.0 7.0
30
VCC = 30
IC/IB = 10
TJ = 25°C
0.05
t,
TIME
(
s)
td
tr
3.0
0.02
10
20
VBE(off) = 5.0 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3771 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3771/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771_00 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH POWER NPN SILICON TRANSISTOR |
| 2N3771_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771G | 功能描述:两极晶体管 - BJT 30A 40V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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