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参数资料
| 型号： | 2N4119A |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFETs |
| 中文描述： | N沟道JFET的 |
| 文件页数： | 2/5页 |
| 文件大小： | 61K |
| 代理商： | 2N4119A |
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature :
(2N Prefix)
65 to 175_C
. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
55 to 150_C
. . . . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix)
55 to 175_C
. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
55 to 150_C
. . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300_C
. . . . . . . . . . . . . . . . . . .
Power Dissipation (case 25_C) :
(2N Prefix)a
300 mW
. . . . . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)b
350 mW
. . . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/_C above 25_C
b.
Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4117
4118
4119
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = 1 mA , VDS = 0 V
70
40
40
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 nA
0.6
1.8
1
3
2
6
V
Saturation Drain Current
IDSS
VDS = 10 V, VGS = 0 V
30
90
80
240
200
600
mA
VGS = 20 V
VDS = 0 V
0.2
1
pA
Gt R
C
t
I
VGS = 20 V
VDS = 0 V
TA = 150_C
2N
0.4
2.5
nA
Gate Reverse Current
IGSS
VGS = 10 V
PN
0.2
1
pA
VGS = 10 V
VDS = 0 V
SST
0.2
10
pA
VGS = 10 V
VDS = 0 V
TA = 100_C
PN/SST
0.03
2.5
nA
Gate Operating Currentb
IG
VDG = 15 V, ID = 30 mA
0.2
pA
Drain Cutoff Currentb
ID(off)
VDS = 10 V, VGS = 8 V
0.2
pA
Gate-Source Forward Voltageb
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
gfs
VDS = 10 V, VGS = 0 V
70
210
80
250
100
330
mS
Common-Source
Output Conductance
gos
VDS = 10 V, VGS = 0 V
f = 1 kHz
3
5
10
mS
Common-Source
Ci
2N/PN
1.2
3
Common-Source
Input Capacitance
Ciss
VDS = 10 V
VGS = 0 V
SST
1.2
pF
Common-Source
C
VGS = 0 V
f = 1 MHz
2N/PN
0.3
1.5
pF
Common-Source
Reverse Transfer Capacitance
Crss
f = 1 MHz
SST
0.3
Equivalent Input Noise Voltageb
en
VDS = 10 V, VGS = 0 V
f = 1 kHz
15
nV
√Hz
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NT
b.
This parameter not registered with JEDEC.
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相关代理商/技术参数 |
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|---|---|
| 2N4119A_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
| 2N4119A-2 | 制造商:Vishay Siliconix 功能描述:SS SOT23 GP XSTR NPN 65V - Bulk |
| 2N4119A-E3 | 功能描述:JFET 40V 0.2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N412 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 15MA I(C) | TO-1 |
| 2N4120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20MA I(D) | TO-72 |
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