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参数资料
| 型号： | 2N4119A |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFETs |
| 中文描述： | N沟道JFET的 |
| 文件页数： | 4/5页 |
| 文件大小： | 61K |
| 代理商： | 2N4119A |
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
4
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
300
240
180
60
0
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
500
0
4
5
2
1
0
TA = 55_C
125_C
100
0
0.4
0.2
0.8
1.0
80
60
20
0
200
160
120
40
0
TA = 125_C
55_C
TA = 55_C
125_C
VDS = 10 V
f = 1 kHz
VDS = 10 V
f = 1 kHz
TA = 55_C
125_C
0.1
1
0.01
100
0
VGS(off) = 0.7 V
2.5 V
RL +
10 V
ID
Assume VDD = 15 V, VDS = 5 V
2.0
0
f = 1 MHz
VDS = 0 V
10 V
VGS Gate-Source Voltage (V)
ID Drain Current (mA)
VGS Gate-Source Voltage (V)
VGS(off) = 0.7 V
VGS(off) = 2.5 V
40
80
60
20
40
80
25_C
0.6
0
0.4
0.2
0.8
1.0
0.6
30
4
5
2
1
3
0
16
20
8
4
12
120
400
300
100
200
1.6
1.2
0.4
0.8
AV +
gfs RL
1 ) RLgos
25_C
g fs
Forward
T
ransconductance
(
S)
g fs
Forward
T
ransconductance
(
S)
A
V
oltage
Gain
C
is
s
Input
Capacitance
(pF)
I D
Drain
Current
(
A)
I D
Drain
Current
(
A)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4119A_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
| 2N4119A-2 | 制造商:Vishay Siliconix 功能描述:SS SOT23 GP XSTR NPN 65V - Bulk |
| 2N4119A-E3 | 功能描述:JFET 40V 0.2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N412 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 15MA I(C) | TO-1 |
| 2N4120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20MA I(D) | TO-72 |
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