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参数资料
| 型号： | 2N4401RL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 199K |
| 代理商： | 2N4401RL |
2N4401
http://onsemi.com
41
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
20
40
80
100
40
—
300
—
Collector–Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
0.4
0.75
Vdc
Base–Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Base–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
—
0.95
1.2
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
250
—
MHz
Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
6.5
pF
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
—
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
k ohms
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
—
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mhos
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 Vdc, VBE = 2.0 Vdc,
td
—
15
ns
Rise Time
(VCC
30 Vdc, VBE
2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
tr
—
20
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
ts
—
225
ns
Fall Time
(VCC
30 Vdc, IC 150 mAdc,
IB1 = IB2 = 15 mAdc)
tf
—
30
ns
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
-2.0 V
< 2.0 ns
0
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
1.0 k
+30 V
200
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
1.0 k
+30 V
200
CS* < 10 pF
-4.0 V
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| 2N4401RLRA | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401RLRAG | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401RLRM | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401RLRMG | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401RLRP | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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