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参数资料
| 型号： | 2N4401RL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 199K |
| 代理商： | 2N4401RL |
2N4401
http://onsemi.com
43
6.0
8.0
10
0
4.0
2.0
0.1
2.0 5.0
10 20
50
1.0
0.5
0.2
0.01 0.02 0.05
100
Figure 9. Frequency Effects
f, FREQUENCY (kHz)
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
NF
,NOISE
FIGURE
(dB)
IC = 1.0 mA, RS = 150
IC = 500 A, RS = 200
IC = 100 A, RS = 2.0 k
IC = 50 A, RS = 4.0 k
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
100k
50
100 200
500 1.0k 2.0k 5.0k 10k 20k
50k
6.0
8.0
10
0
4.0
2.0
NF
,NOISE
FIGURE
(dB)
Figure 10. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
IC = 50 A
IC = 100 A
IC = 500 A
IC = 1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from the 2N4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
100
200
20
70
50
300
h fe
,CURRENT
GAIN
h ie
,INPUT
IMPEDANCE
(OHMS)
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
50k
500
30
5.0 7.0
20k
10k
5.0k
2.0k
1.0k
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
0.2
10
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h
,OUTPUT
ADMITT
ANCE
(
mhos)
oe
h
,VOL
TAGE
FEEDBACK
RA
TIO
(X
10
)
re
m
-4
2N4401 UNIT 1
2N4401 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4401RLRE | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4401RL1 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4401T93 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4401TPE2 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4401TPE1 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4401RLRA | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401RLRAG | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401RLRM | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401RLRMG | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401RLRP | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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