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参数资料
| 型号： | 2N5087D27Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 11/18页 |
| 文件大小： | 561K |
| 代理商： | 2N5087D27Z |
3
2N5086
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MMBT5086
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2N5087
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MMBT5087
Electrical Characteristics
TA= 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
50
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
50
V
ICBO
Collector Cutoff Current
VCB = 10 V, IE = 0
VCB = 35 V, IE = 0
10
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 100
A, VCE = 5.0 V
5086
5087
IC = 1.0 mA, VCE = 5.0 V
5086
5087
IC = 10 mA, VCE = 5.0 V
5086
5087
150
250
150
250
150
250
500
800
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
0.3
V
VBE(on)
Base-Emitter On Voltage
IC = 1.0 mA, VCE = 5.0 V
0.85
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 500
A,VCE= 5.0 V,f= 20 MHz
40
MHz
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0, f = 100 kHz
4.0
pF
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 5.0,
5086
f = 1.0 kHz
5087
150
250
600
900
NF
Noise Figure
IC = 100
A, VCE = 5.0 V, 5086
RS = 3.0 k
, f = 1.0 kHz
5087
IC = 20
A, VCE = 5.0 V,
5086
RS = 10 k
,
5087
f = 10 Hz to 15.7 kHz
3.0
2.0
3.0
2.0
dB
PNP General Purpose Amplifier
(continued)
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=6.734f Xti=3 Eg=1.11 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2 Isc=0
Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p Itf=.17 Vtf=5
Xtf=8 Rb=10)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5087G | 功能描述:两极晶体管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N5087RLRA | 功能描述:两极晶体管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087RLRAG | 功能描述:两极晶体管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TA | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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