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参数资料
| 型号： | 2N5192 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 227K |
| 代理商： | 2N5192 |
June 2007
Rev 3
1/9
9
Table 1.
Devices summary
Order code
Marking
Package
Packaging
2N5191
SOT-32
Tube
2N5192
SOT-32
Tube
2N5191
2N5192
NPN power transistors
Features
■
NPN transistors
Applications
■
Linear and switching industrial equipment
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP type of 2N5192 is 2N5195.
Figure 1.
Internal schematic diagram
3
2
1
SOT-32
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5195 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N5194 | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2N5209RLRF | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5209RLRA | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5210RLRP | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5192 SL H | 功能描述:PWR TRANSISTOR GP TH TO126 制造商:central semiconductor corp 系列:* 零件状态:新产品 标准包装:50 |
| 2N5192 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-126 |
| 2N5192G | 功能描述:两极晶体管 - BJT 4A 80V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5192R | 功能描述:PWR TRANSISTOR GP TH TO126 制造商:central semiconductor corp 系列:* 零件状态:生命周期结束 标准包装:1,000 |
| 2N5193 | 制造商:SPC Multicomp 功能描述:TRANSISTORPNP1A40VTO126 制造商:SPC Multicomp 功能描述:TRANSISTOR,PNP,1A,40V,TO126 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:40W; DC Collector Current:1A; DC Current Gain hFE:100; No. of Pins:3 ;RoHS Compliant: Yes |
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