参数资料
型号: 2N5192
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 3/9页
文件大小: 227K
代理商: 2N5192
2N5191 2N5192
Electrical characteristics
3/9
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
s, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = rated VCBO
0.1
mA
ICEX
Collector cut-off current
(VBE = -1.5V)
VCE = rated VCEO
VCE = rated VCEO Tc=125°C
0.1
2
mA
ICEO
Collector cut-off current
(IB = 0)
VCE = rated VCEO
1mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
1mA
VCEO(sus) (1)
Collector-emitter
sustaining voltage
(IB = 0)
IC =100mA
for 2N5191
for 2N5192
60
80
V
VCE(sat) (1) Collector-emitter
saturation voltage
IC = 1.5A _ IB = 0.15A
IC = 4A
_ IB = 1A
0.6
1.4
V
VBE (1)
Base-emitter voltage
IC = 1.5A _ _ VCE = 2V
1.2
V
hFE
DC current gain
IC = 1.5A _ _ VCE =2V
for 2N5191
for 2N5192
IC =4A
VCE =2V
for 2N5191
for 2N5192
25
20
10
7
100
80
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