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参数资料
| 型号： | 2N5199 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 封装： | HERMETIC SEALED PACKAGE-6 |
| 文件页数： | 7/7页 |
| 文件大小： | 65K |
| 代理商： | 2N5199 |
Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
1
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All product specifications and data are subject to change without notice.
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相关PDF资料 |
PDF描述 |
|---|---|
| 2N5196 | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 2N5210RLRA | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5210RL1 | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5210RL | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5209RLRE | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5199-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N520 | 制造商:. 功能描述: |
| 2N5200 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-46 |
| 2N5202 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 4A 2PIN TO-66 - Bulk |
| 2N5204 | 功能描述:SCR 600 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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